Overlay Accuracy Limitations of Soft Stamp UV Nanoimprint Lithography and Circumvention Strategies for Device Applications

In this work multilevel pattering capabilities of Substrate Conformal Imprint Lithography (SCIL) have been explored. A mix & match approach combining the high throughput of nanoimprint lithography with the excellent overlay accuracy of electron beam lithography (EBL) has been exploited to fabricate nanoscale devices. An EBL system has also been utilized as a benchmarking tool to measure both stamp distortions and alignment precision of this mix & match approach. By aligning the EBL system to 20 mm x 20 mm and 8 mm x 8 mm cells to compensate pattern distortions of order of $3 \mu m$ over 6 inch wafer area, overlay accuracy better than $1.2 \mu m$ has been demonstrated. This result can partially be attributed to the flexible SCIL stamp which compensates deformations caused by the presence of particles which would otherwise significantly reduce the alignment precision

A verified equivalent-circuit model for slotwaveguide modulators

We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travellingwave silicon-organic hybrid (SOH) slot-waveguide modulators. The model allows to reliably predict the small-signal EO frequency response of the modulators exploiting purely electrical measurements of the frequency-dependent RF transmission characteristics. We experimentally verify the validity of our model, and we formulate design guidelines for an optimum trade-off between optical loss due to free-carrier absorption (FCA), electro-optic bandwidth, and {\pi}-voltage of SOH slot-waveguide modulators

A programmable, multi-format photonic transceiver platform enabling flexible optical networks

Development of programmable photonic devices for future flexible optical networks is ongoing. To this end, an innovative, multi-format QAM transmitter design is presented. It comprises a segmented-electrode InP IQ-MZM to be fabricated in InP, which can be directly driven by low-power CMOS logic. Arbitrary optical QAM format generation is made possible using only binary electrical signals, without the need for high-performance DACs and high-swing linear drivers. The concept enables a host of Tx-side DSP functionality, including the spectral shaping needed for Nyquist-WDM system concepts. In addition, we report on the development of an optical channel MUX/DEMUX, based on arrays of microresonator filters with reconfigurable bandwidths and center wavelengths. The device is intended for operation with multi-format flexible transceivers, enabling Dense (D)WDM superchannel aggregation and arbitrary spectral slicing in the context of a flexible grid environment

Verified equivalent-circuit model for slot-waveguide modulators

We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travelling-wave silicon-organic hybrid (SOH) slot-waveguide modulators. The model allows to reliably predict the small-signal EO frequency response of the modulators exploiting purely electrical measurements of the frequency-dependent RF transmission characteristics. We experimentally verify the validity of our model, and we formulate design guidelines for an optimum trade-off between optical loss due to free-carrier absorption (FCA), electro-optic bandwidth, and π-voltage of SOH slot-waveguide modulators

A verified equivalent-circuit model for slotwaveguide modulators

We formulate and experimentally validate an equivalent-circuit model based on distributed elements to describe the electric and electro-optic (EO) properties of travellingwave silicon-organic hybrid (SOH) slot-waveguide modulators. The model allows to reliably predict the small-signal EO frequency response of the modulators exploiting purely electrical measurements of the frequency-dependent RF transmission characteristics. We experimentally verify the validity of our model, and we formulate design guidelines for an optimum trade-off between optical loss due to free-carrier absorption (FCA), electro-optic bandwidth, and {\pi}-voltage of SOH slot-waveguide modulators

Разработка мероприятий для повышения эффективности и безопасности работы объектов линейной части участка магистрального газопровода "Сила Сибири"

Объектом исследования является участок магистрального газопровода "Сила Сибири". Цель работы – разработка мероприятий для повышения эффективности и безопасности работы объектов линейной части магистрального газопровода "Сила Сибири". В процессе исследования проводились расчеты толщины стенки трубопровода, расчет на прочность и устойчивость, прогнозный расчет размыва грунта засыпки на склоне на основании СП 36.13330.2012, СП 425.1325800.2018, а также с использованием РД 51-2.4-007-97 как справочного материала. Рассмотрены вопросы причин и последствий аварий на магистральных газопроводах (МГ), воздействия на МГ опасных геологических процессов (ОГП), рассмотрение процесса разработки и обоснования выбора мероприятий и сооружений инженерной защиты МГ от эрозионных процессов.The object of study is the section of the Power of Siberia gas pipeline. The purpose of the work is the development of measures to improve the efficiency and safety of the facilities of the linear part of the Power of Siberia gas pipeline. In the course of the study, calculations were made of the wall thickness of the pipeline, a calculation of strength and stability, a predictive calculation of erosion of backfill soil on the slope based on SP 36.13330.2012, SP 425.1325800.2018, and also using RD 51-2.4-007-97 as reference material. Issues of the causes and consequences of accidents on main gas pipelines (MG), the impact on MG of hazardous geological processes (GCP)

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large switching window. Metal filament formation is frequently suggested for h-BN devices as the resistive switching (RS) mechanism, usually supported by highly specialized methods like conductive atomic force microscopy (C-AFM) or transmission electron microscopy (TEM). Here, we investigate the switching of multilayer hexagonal boron nitride (h-BN) threshold memristors with two nickel (Ni) electrodes through their current conduction mechanisms. Both the high and the low resistance states are analyzed through temperature-dependent current-voltage measurements. We propose the formation and retraction of nickel filaments along boron defects in the h-BN film as the resistive switching mechanism. We corroborate our electrical data with TEM analyses to establish temperature-dependent current-voltage measurements as a valuable tool for the analysis of resistive switching phenomena in memristors made of 2D materials. Our memristors exhibit a wide and tunable current operation range and low stand-by currents, in line with the state of the art in h-BN-based threshold switches, a low cycle-to-cycle variability of 5%, and a large On/Off ratio of 10${^7}$.Comment: 39 page

Surface modified silicon nanochannel for urea sensing

Silicon nanowires have been surface functionalized with the enzyme urease for biosensor applications to detect and quantify urea concentration. The device is nanofabricated from a silicon on insulator (SOI) wafer with a top down lithography approach. The differential conductance of silicon nanowires can be tuned for optimum performance using the source drain bias voltage, and is sensitive to urea at low concentration. The experimental results show a linear relationship between surface potential change and urea concentration in the range of 0.1 to 0.68 mM. The sensitivity of our devices shows high reproducibility with time and different measurement conditions. The nanowire urea biosensor offers the possibility of high quality, reusable enzyme sensor array integration with silicon based circuits.Comment: 5 pages, 6 figures, two-column format. Related papers can be found at nano.bu.ed